The pin diode receives its name from the fact that is has three main layers.
Pin diode laser detector.
The wide intrinsic region is in contrast to an ordinary p n diode the wide intrinsic region makes the pin diode an inferior rectifier one typical.
Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result.
Silicon pin photodiodes are reverse biased pin diodes which detect light and generate current as a result.
Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications.
For higher demands ingaas is used.
The p type and n type regions are typically heavily doped because they are used for ohmic contacts.
Silicon is commonly used as an inexpensive detector material in the vis range.
Rather than just having a p type and an n type layer the pin diode has three layers.
A further use of the pin diode is as a photo detector photodetector or photo diode where its structure is particularly suited to absorbing light.
1310 nm and 1550 nm.
A pin diode comprises a near intrinsic semiconductor region usually the space charge region sandwiched between a p type diode and an n type substrate.
However the term is also used for components with inverse conductivity provided that no other non linear effects are utilized in the component.
Pin photodiode has an intrinsic very lightly doped semiconductor region sandwiched between a p doped and an n doped region as shown below.
The pin photodiode structure allows high quantum efficiency and fast response for detection of photons in the 400nm to 1100nm range.
It covers the widest spectral range from the vis to the nir.
The pin photodiode structure has an intrinsic layer within the depletion region which allows high quantum efficiency and fast response for detection of photons.
Silicon pin photodiodes are available with a wide variety of active areas to accommodate many varied applications.
The high resistive layer of the intrinsic region provides the large electric field between the p and n region.
Ldi pinamps provide a low cost high performance miniature optical receiver module which integrates a high speed high responsivity low leakage current ingaas photodiode with a gaas transimpedance amplifier.
A pin diode p type intrinsic n type diode is a diode with a wide region of intrinsic semiconductor material undoped contained between a p type semiconductor and an n type semiconductor.
A pin diode is a diode with a wide undoped intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region.
Osi laser diode inc.
The following graph shows the detector response curve for different materials.
Pinamp mini dil optical receiver modules.
The advantage of a pin diode is that the depletion region exists almost completely within the intrinsic region which has a constant width or almost constant regardless of disturbances applied to the diode.
Pin photodiodes convert light to current without a bias voltage having to be applied.
