Light striking the crystal lattice can release holes and electrons which are drawn away out of the depletion.
Pin diode switching characteristics.
At higher frequencies the diode looks like an almost perfect very linear even for large signals resistor.
Pin diode possesses very low reverse recovery time.
As we already discussed that a pin diode offers a lower value of capacitance due to the larger distance between p and n region.
A microwave pin diode is a semiconductor device that operates as a variable resistor at rf and microwave frequencies.
The diode obeys standard diode equation for all the low frequency signals.
Characteristics of pin diode.
The wide depletion layer provided by the intrinsic layer ensures that pin diodes have a high reverse breakdown characteristic.
The pin diode can be used as a high voltage rectifier.
Some of the pin diode characteristics are given in the points below.
The intrinsic layer in the diode offers a partition between the both the layers permitting higher reverse voltages to be tolerated.
The pin diode is used as an ideal radio frequency switch.
The intrinsic layer between the p and n regions increases the distance between them.
Characteristics of pin diode low capacitance.
The intrinsic layer among the p n layers increases the space between them.
At a low enough frequency the stored charge can be fully swept and the diode turns off.
A pin diode is a current controlled device in contrast to a varactor diode which is a voltage controlled device.
The diode characteristic that affects tfr is τ carrier lifetime.
The pin diode makes an ideal rf switch.
The value of tfr may be computed from the forward current if and the initial reverse current ir as follows.
Pin diode is formed by sandwiching intrinsic layer high resistivity about 0 1 ω m between p type and n type semiconductor to create an electric field between them.
The pin diode is used as a high voltage rectifier.
The pin diode obeys the standard diode equation for low frequency signals.
The capacitance of pin diode is independent of bias level as the net charge is said to be very less in the intrinsic layer.
A pin diode has two switching speeds from forward bias to reverse bias tfr and from reverse bias to forward bias trf.
This pin diode characteristic can have significant advantages in a number of rf applications for example when a pin diode is used as an rf switch.
When only a small reverse potential is applied the depletion region gets totally depleted.
It has a wide undoped intrinsic semiconductor region i sandwiched between a p type semiconductor p and an n type semiconductor region n hence the pin designation.
The pin diode is a special diode which can be configured as an rf switch.
The intrinsic region provides a greater separation between the pn and n regions allowing higher reverse voltages to be tolerated.
The sensitive area of a photodiode is the depletion region.
